Adjusted Confidence Bands in Nonparametric RegressionGUOYI ZHANG; YAN LU.Communications in statistics. Simulation and computation. 2008, Vol 37, Num 1-2, pp 106-113, issn 0361-0918, 8 p.Article

Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (0 1 1 2) sapphire substratesLISEN CHENG; ZE ZHANG; GUOYI ZHANG et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 641-645, issn 0022-0248Article

A grid-based system for the multi-reservoir optimal scheduling in huaihe river basinBING LIU; HUAPING CHEN; GUOYI ZHANG et al.Lecture notes in computer science. 2006, pp 672-677, issn 0302-9743, isbn 3-540-31158-0, 1Vol, 6 p.Conference Paper

AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxyJIANQIN QU; JING LI; GUOYI ZHANG et al.Solid state communications. 1998, Vol 107, Num 9, pp 467-470, issn 0038-1098Article

Systemic modification of cotton root exudates induced by arbuscular mycorrhizal fungi and Bacillus vallismortis HJ-5 and their effects on Verticillium wilt diseaseGUOYI ZHANG; RAZA, Wasim; XIAOHUI WANG et al.Applied soil ecology (Print). 2012, Vol 61, pp 85-91, issn 0929-1393, 7 p.Article

Effects of growth temperature modulated by HCl flow rate on the surface and crystal qualities of thick GaN by HVPELUBING ZHAO; JIEJUN WU; KE XU et al.Applied surface science. 2009, Vol 255, Num 18, pp 8003-8009, issn 0169-4332, 7 p.Article

Development of a phylogenetic tree model to investigate the role of genetic mutations in endometrial tumorsGUOYI ZHANG; BECK, Brandon B; WENTAO LUO et al.Oncology reports. 2011, Vol 25, Num 5, pp 1447-1454, issn 1021-335X, 8 p.Article

Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templatesLUBING ZHAO; TONGJUN YU; JIEJUN WU et al.Applied surface science. 2010, Vol 256, Num 7, pp 2236-2240, issn 0169-4332, 5 p.Article

Strain effect on polarized optical properties of c-plane GaN and m-plane GaNRENCHUN TAO; TONGJUN YU; CHUANYU JIA et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 206-210, issn 1862-6300, 5 p.Conference Paper

Structural properties of β-Ga₂O₃ formed by dry thermal oxidization process on GaNWEI WEI; ZHIXIN QIN; SHENG ZHAO et al.Materials science in semiconductor processing. 2012, Vol 15, Num 5, pp 578-581, issn 1369-8001, 4 p.Article

Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodesCHUANYU JIA; TONGJUN YU; XIAODONG HU et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 1, pp 257-261, issn 1862-6300, 5 p.Conference Paper

A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etchingLUO, Weike; LIANG LI; ZHONGHUI LI et al.Applied surface science. 2013, Vol 286, pp 358-363, issn 0169-4332, 6 p.Article

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor depositionZHENG LI; YUXUAN JIANG; TONGJUN YU et al.Applied surface science. 2011, Vol 257, Num 18, pp 8062-8066, issn 0169-4332, 5 p.Article

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substratesYONGJIAN SUN; SIMEON TRIEU; TONGJUN YU et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085008.1-085008.5Article

Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to CuYONGJIAN SUN; TONGJUN YU; ZHIZHONG CHEN et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125022.1-125022.4Article

Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDsLIUBING HUANG; TONGJUN YU; ZHIZHONG CHEN et al.Journal of luminescence. 2009, Vol 129, Num 12, pp 1981-1984, issn 0022-2313, 4 p.Conference Paper

Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVDXUELIN YANG; JIEJUN WU; ZHITAO CHEN et al.Solid state communications. 2007, Vol 143, Num 4-5, pp 236-239, issn 0038-1098, 4 p.Article

Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVDTONGJUN YU; YAOBO PAN; ZHIJIAN YANG et al.Journal of crystal growth. 2007, Vol 298, pp 211-214, issn 0022-0248, 4 p.Conference Paper

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)JIEJUN WU; LUBING ZHAO; GUOYI ZHANG et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 2, pp 294-299, issn 1862-6300, 6 p.Article

Magnetic and magneto-transport properties of Ga_1-xMn_xN grown by MOCVDXUELIN YANG; ZHITAO CHEN; JIEJUN WU et al.Journal of crystal growth. 2007, Vol 305, Num 1, pp 144-148, issn 0022-0248, 5 p.Article

New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactorJIEJUN WU; LUBING ZHAO; DONGYUAN WEN et al.Applied surface science. 2009, Vol 255, Num 11, pp 5926-5931, issn 0169-4332, 6 p.Article

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl₂/SiCl₄/Ar plasmaRUI LI; TAO DAI; LING ZHU et al.Journal of crystal growth. 2007, Vol 298, pp 375-378, issn 0022-0248, 4 p.Conference Paper

Fabrication and properties for white LED with InGaN SQWZHONGHUI LI; ZHIJIAN YANG; XIAOMIN DING et al.SPIE proceedings series. 2005, pp 262-266, isbn 0-8194-5587-3, 5 p.Conference Paper

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayersYAOBO PAN; TONGJUN YU; ZHIJIAN YANG et al.Journal of crystal growth. 2007, Vol 298, pp 341-344, issn 0022-0248, 4 p.Conference Paper

Improvement of Light Extraction from Micro-Pattern Encapsulated GaN-based LED by ImprintingKUI BAO; BEI ZHANG; XIANGNING KANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100N.1-69100N.8, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper